A 500 fW/bit 14 fJ/bit-access 4kb standard-cell based sub-VT memory in 65nm CMOS
نویسندگان
چکیده
Ultra-low power (ULP) biomedical implants and sensor nodes typically require small memories of a few kb, while previous work on reliable subthreshold (sub-VT) memories targets several hundreds of kb. Standard-cell based memories (SCMs) are a straightforward approach to realize robust subVT storage arrays and fill the gap of missing sub-VT memory compilers. This paper presents an ultra-low-leakage 4kb SCM manufactured in 65nm CMOS technology. To minimize leakage power during standby, a single custom-designed standard-cell (Dlatch with 3-state output buffer) addressing all major leakage contributors of SCMs is seamlessly integrated into the fully automated SCM compilation flow. Silicon measurements of a 4kb SCM indicate a leakage power of 500 fW per stored bit (at a data-retention voltage of 220 mV) and a total energy of 14 fJ per accessed bit (at energy-minimum voltage of 500mV), corresponding to the lowest values in 65 nm CMOS reported to date.
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